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Effect of polyethylene oxide on camphor sulfonic acid doped polyaniline thin film field effect transistor with ionic liquid gating

https://doi.org/10.1016/j.synthmet.2019.116176

Rijos, Luis M. ; Melendez, Anamaris ; Oyola, Rolando ; Pinto, Nicholas J. ( November 2019 , Synthetic Metals)

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Effect of varying the gate voltage scan rate in a MoS 2 /ferroelectric polymer field effect transistor

https://doi.org/10.1080/00150193.2019.1652493

Pinto, Nicholas J. ; Rijos, Luis M. ; Zhao, Meng-Qiang ; Parkin, William M. ; Johnson, A.T. Charlie ( October 2019 , Ferroelectrics)

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Tunable Organic Polymer/Inorganic Silicon Diode Using an Ionic Liquid Gel Gate Dielectric

https://doi.org/10.1002/pssa.201900358

Rijos, Luis M. ; Pinto, Nicholas J. ( August 2019 , physica status solidi (a))

A diode is fabricated using poly(3,4‐ethylenedioxythiophene) doped with poly(styrene sulfonic acid) (PEDOT‐PSS) and n‐doped Si. Using an ionic liquid (IL) gel as the gate dielectric, the diode rectification ratio is tunable up to four orders of magnitude at very low operating voltages. Both p–n and Schottky type diodes are observed in the same device depending on the polarity of the gate voltage. IL‐gated electrostatic/electrochemical doping in PEDOT‐PSS is believed to be responsible for this switch. The turn‐on voltage in the first quadrant of the current–voltage (I–V) curve for the p–n diode is in the range 0.2–0.4 V. The Schottky diode operates in the third quadrant. This is the first report on a tunable diode using an IL to control its operation, and the low operating voltages make these diodes excellent candidates for use in reduced power consumption electronics.

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Ionic liquid gated poly(triaryl amine) thin film field effect transistor

https://doi.org/10.1002/app.50361

Rijos, Luis M. ; Figueroa, Kelotchi S. ; Porcu, Angelo ; Rivera, Naomi M. ; Meléndez, Anamaris ; Ramos, Idalia ; Pinto, Nicholas J. ( December 2020 , Journal of Applied Polymer Science)

Abstract
A poly(triaryl amine) thin film field effect transistor was investigated in air with ionic liquid (IL) gating for the first time. The transistor retained a high‐on/off ratio of ~700 and mobility of ~10⁻²cm²/V‐s. When compared to a transistor based on the conducting polymer polyaniline under similar operating conditions, it was found to exhibit superior performance. Significantly low‐operating voltages (±1 V) enhances the possibility of its use in organic electronics. The device was successfully tested for binary operation, and we demonstrate its suitability for use in low‐power consumption electronic circuits.

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